Tye C. | Graduate School of Engineering, Tohoku University
スポンサーリンク
概要
関連著者
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Teramoto A.
New Industry Creation Hatchery Center, Tohoku University
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Cheng W.
New Industry Creation Hatchery Center, Tohoku University
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Tye C.
Graduate School of Engineering, Tohoku University
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Sugawa S.
Graduate School of Engineering, Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University
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Tye C.
Graduate School Of Engineering Tohoku University
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Sugawa S.
Graduate School Of Engineering Tohoku University
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Teramoto A.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University:wpi Research Center Tohoku University
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Cheng W.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University
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Kuroda R.
Graduate School of Engineering, Tohoku University
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Suwa T.
New Industry Creation Hatchery Center, Tohoku University
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Watabe S.
Graduate School of Engineering, Tohoku University
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Goto T.
New Industry Creation Hatchery Center, Tohoku University
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Imaizumi F.
New Industry Creation Hatchery Center, Tohoku University
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Suwa T.
New Industry Creation Hatchery Center Tohoku University
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Watabe S.
Graduate School Of Engineering Tohoku University
著作論文
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)