Sugawa S. | Graduate School Of Engineering Tohoku University

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概要

• SUGAWA S.の詳細を見る
• 同名の論文著者
• Graduate School Of Engineering Tohoku Universityの論文著者

関連著者

• Teramoto A.

  New Industry Creation Hatchery Center, Tohoku University

• Sugawa S.

  Graduate School of Engineering, Tohoku University

• Ohmi T.

  New Industry Creation Hatchery Center, Tohoku University

• Sugawa S.

  Graduate School Of Engineering Tohoku University

• Teramoto A.

  New Industry Creation Hatchery Center Tohoku University

• Ohmi T.

  New Industry Creation Hatchery Center Tohoku University

• Ohmi T.

  New Industry Creation Hatchery Center Tohoku University:wpi Research Center Tohoku University

• Cheng W.

  New Industry Creation Hatchery Center, Tohoku University

• Kuroda R.

  Graduate School of Engineering, Tohoku University

• Tye C.

  Graduate School Of Engineering Tohoku University

• Cheng W.

  New Industry Creation Hatchery Center Tohoku University

• Tye C.

  Graduate School of Engineering, Tohoku University

• Suwa T.

  New Industry Creation Hatchery Center, Tohoku University

• Suwa T.

  New Industry Creation Hatchery Center Tohoku University

• Li X.

  Graduate School of Engineering, Tohoku University

• Tye C.

  Department Of Cytokine Biology Harvard School Of Dental Medicine

• Watabe S.

  Graduate School of Engineering, Tohoku University

• Goto T.

  New Industry Creation Hatchery Center, Tohoku University

• Imaizumi F.

  New Industry Creation Hatchery Center, Tohoku University

• Gaubert P.

  New Industry Creation Hatchery Center, Tohoku University

• Hirayama M.

  New Industry Creation Hatchery Center, Tohoku University

• Gaubert P.

  New Industry Creation Hatchery Center Tohoku University

• Tye C.

  Department Of Cytokine Biology Forsyth Institute And Department Of Developmental Biology Harvard Sch

• Watabe S.

  Graduate School Of Engineering Tohoku University

• Ohmi T.

  New Industry Creation Hatchery Center, Tohoku University:WPI Research Center, Tohoku University

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著作論文

• MOS Transistors fabricated on Si(551) surface based on radical reaction processes
• High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
• High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
• MOS Transistors fabricated on Si(551) surface based on radical reaction processes
• High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
• High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

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