High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
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概要
- 論文の詳細を見る
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambient at 800℃, atomically flat surfaces composed of atomic terraces and steps appear uniformly in the whole 200 mm wafer without generating slip line defects. Moreover, the whole 200 mm wafer surface can be atomically flattened in shorter time by increasing the argon gas flow rate and the annealing temperature of vertical furnace. Furthermore, the MOS capacitors with the atomically flat gate oxide/Si interface formed by radical oxidation on the flattened surface show superior insulating properties such as higher E_<bd> and Q_<bd>.
- 2010-06-23
著者
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Teramoto A.
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S.
Graduate School of Engineering, Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University
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Li X.
Graduate School of Engineering, Tohoku University
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Kuroda R.
Graduate School of Engineering, Tohoku University
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Suwa T.
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S.
Graduate School Of Engineering Tohoku University
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Teramoto A.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University
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Suwa T.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University:WPI Research Center, Tohoku University
関連論文
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
- High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
- High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs
- SiO_2/Si(111) Interface Structures Formed by Atomic Oxygen