High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs
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概要
- 論文の詳細を見る
We demonstrate that the electron and hole mobilities are improved on both Si (100) and (110) surfaces using accumulation mode (AM) MOSFETs because of the bulk current and lower effective field in the same overdrive bias. Flicker noise characteristics are improved dramatically at AM MOSFETs compared with that at conventional inversion mode (IM) devices. Finally, we demonstrate the negative bias temperature instability (NBTI) characteristics in AM devices are improved about one decade compared with that in IM devices.
- 社団法人電子情報通信学会の論文
- 2006-09-28
著者
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Teramoto A.
New Industry Creation Hatchery Center, Tohoku University
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Cheng W.
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S.
Graduate School of Engineering, Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University
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Kuroda R.
Graduate School of Engineering, Tohoku University
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Tye C.
Graduate School Of Engineering Tohoku University
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Tye C.
Department Of Cytokine Biology Harvard School Of Dental Medicine
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Gaubert P.
New Industry Creation Hatchery Center, Tohoku University
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Hirayama M.
New Industry Creation Hatchery Center, Tohoku University
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Gaubert P.
New Industry Creation Hatchery Center Tohoku University
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Tye C.
Department Of Cytokine Biology Forsyth Institute And Department Of Developmental Biology Harvard Sch
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Sugawa S.
Graduate School Of Engineering Tohoku University
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Teramoto A.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University:wpi Research Center Tohoku University
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Cheng W.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University
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