High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
スポンサーリンク
概要
- 論文の詳細を見る
We have been successful in realizing a very high performance novel balanced CMOS on Si(110) and high performance MOSFETs on Si(100) using accumulation-mode devices. We dramatically improve the oscillation performance using the novel accumulation mode FD-SOI balanced CMOS on Si(110) surface. This technology is very useful for realizing advanced high performance analog/digital mixed circuits.
- 社団法人電子情報通信学会の論文
- 2007-09-27
著者
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Teramoto A.
New Industry Creation Hatchery Center, Tohoku University
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Cheng W.
New Industry Creation Hatchery Center, Tohoku University
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Tye C.
Graduate School of Engineering, Tohoku University
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Sugawa S.
Graduate School of Engineering, Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University
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Kuroda R.
Graduate School of Engineering, Tohoku University
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Suwa T.
New Industry Creation Hatchery Center, Tohoku University
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Tye C.
Graduate School Of Engineering Tohoku University
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Watabe S.
Graduate School of Engineering, Tohoku University
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Goto T.
New Industry Creation Hatchery Center, Tohoku University
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Imaizumi F.
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S.
Graduate School Of Engineering Tohoku University
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Teramoto A.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University:wpi Research Center Tohoku University
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Cheng W.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University
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Suwa T.
New Industry Creation Hatchery Center Tohoku University
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Watabe S.
Graduate School Of Engineering Tohoku University
関連論文
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- High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
- High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs
- SiO_2/Si(111) Interface Structures Formed by Atomic Oxygen