Teramoto A. | New Industry Creation Hatchery Center Tohoku University
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概要
関連著者
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Teramoto A.
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S.
Graduate School of Engineering, Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University
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Sugawa S.
Graduate School Of Engineering Tohoku University
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Teramoto A.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center Tohoku University:wpi Research Center Tohoku University
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Cheng W.
New Industry Creation Hatchery Center, Tohoku University
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Kuroda R.
Graduate School of Engineering, Tohoku University
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Tye C.
Graduate School Of Engineering Tohoku University
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Cheng W.
New Industry Creation Hatchery Center Tohoku University
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Tye C.
Graduate School of Engineering, Tohoku University
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Suwa T.
New Industry Creation Hatchery Center, Tohoku University
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Suwa T.
New Industry Creation Hatchery Center Tohoku University
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Li X.
Graduate School of Engineering, Tohoku University
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Tye C.
Department Of Cytokine Biology Harvard School Of Dental Medicine
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Watabe S.
Graduate School of Engineering, Tohoku University
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Goto T.
New Industry Creation Hatchery Center, Tohoku University
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Imaizumi F.
New Industry Creation Hatchery Center, Tohoku University
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Gaubert P.
New Industry Creation Hatchery Center, Tohoku University
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Hirayama M.
New Industry Creation Hatchery Center, Tohoku University
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Gaubert P.
New Industry Creation Hatchery Center Tohoku University
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Tye C.
Department Of Cytokine Biology Forsyth Institute And Department Of Developmental Biology Harvard Sch
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Watabe S.
Graduate School Of Engineering Tohoku University
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Ohmi T.
New Industry Creation Hatchery Center, Tohoku University:WPI Research Center, Tohoku University
著作論文
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
- High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
- MOS Transistors fabricated on Si(551) surface based on radical reaction processes
- High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
- High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs