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Nec Electronics Corporation | 論文
- Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- パワースイングスパッタ法を用いたMOCVD-Cu配線用TaN膜の評価
- Degradation of Organic Layers of Organic Light Emitting Devices by Continuous Operation
- Improved Luminous Efficiency of Organic Light-Emitting Diodes by Carrier Trapping Dopants : Optical Properties of Condensed Matter
- Driving Duty Ratio Dependence of Lifetime of Tris(8-hydroxy-quinolinate)aluminum-Based Organic Light-Enitting Diodes
- Operating Current Mode Dependence of Luminescence Properties of Rubrene-doped Yellow Organic Light Emitting Diodes
- 3-V Operation Power HBTs for Digital Cellular Phones (Special Issue on Microwave Devices for Mobile Communications)
- Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications (Special Issue on Heterostructure Electron Devices)
- Accurate Modeling Method for Cu Interconnect
- Statistical Corner Conditions of Interconnect Delay (Corner LPE Specifications)
- A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13μm Complementary Metal Oxide Semiconductor Generation
- Chip-Level Performance Improvement Using Triple Damascene Wiring Design Concept for the 0.13μm CMOS Generation and Beyond(Novel Device Architectures and System Integration Technologies)
- Multilevel Aluminum Dual-Damascene Interconnects for Process-Step Reduction in 0.18 μm ULSIs
- Multilevel Aluminum Dual-Damascene Interconnects (Al-DDI) for Process-Step Reduction in 0.18um-ULSIs
- フラッシュメモリー過剰消去メカニズムの解析 : スケーリング則に対する新しい制約
- High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28V Operated W-CDMA Base Station(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- A Single Chip H.32X Multimedia Communication Processor with CIF 30 fr/s MPEG-4/H.26X Bi-directional Codec(Low-Power System LSI, IP and Related Technologies)
- A Debug System for Heterogeneous Multiple Processors in a Single Chip for Multimedia Communication(Special Issue on Test and Verification of VLSI)
- Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- 1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p^+-GaAs Gate Hetero-Junction FET