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National Chiao Tung University | 論文
- ISO-4 Simultaneous detection of proliferation, apoptosis, invasive ability, and cytoskeletal organization in cancer cells by nanodot arrays device(Group1 Oncology,International Session: Oral Presentation)
- プリパルス手法におけるダブルターゲットの設計と最適化
- Effects of Rhenium on Microstructure and Phase Stability of MAR-M247 Ni-Base Fine-Grain Superalloy
- Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- English Education in Taiwan : From Elementary to University Level(2)(English Education at the Tertiary Level-in Search of a Consistent Curriculum from Elementary School through University)
- Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
- Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
- A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
- A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
- Effects of Floating-Gate Doping Concentration of Flash Cell Performance
- Characterization of Antenna Effect by Nondestructive Gate Current Measurement
- Minimum Shield Insertion on Full-Chip RLC Crosstalk Budgeting Routing
- Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition