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Nanya Technology Corporation | 論文
- Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
- Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode
- Effects of Post CF_4 Plasma Treatment on the HfO_2 Thin Film
- Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment
- Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application
- Modifications on pH sensitivity of Si_3N_4 membrane by CF_4 plasma and rapid thermal annealing for ISFET/REFET applications
- Current Transportation Mechanism of HfO_2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application
- Current Transportation Mechanism and Interface States Characterization of Sputtered Gd_2O_3 Gate Dielectrics for ULSI Application
- Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
- Thermal Stability Improvements for HfO_2 by Fluorine Implantation
- Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress
- Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film
- Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing