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NTT Microsystem Integration Laboratories | 論文
- Application of Electron Beam Cured Spin-On Glass to Trilevel Resist System for Deep and Vacuum Ultraviolet Lithography
- Effect of Ground-Wall Structure in Capacitive Fingerprint Sensor on Electrostatic Discharge Tolerance
- Pixel-Parallel Image-Matching Circuit Schemes for a Single-Chip Fingerprint Sensor and Identifier(Electronic Circuits)
- An Architectural Study of an MPEG-2 422P@HL Encoder Chip Set(Special Section on Digital Signal Processing)
- A Chip Set for Programmable Real-Time MPEG2 MP@ML Video Encoder(Special Issue on Multimedia, Network, and DRAM LSIs)
- Evaluation of Finished Extreme Ultraviolet Lithography (EUVL) Masks Using a EUV Microscope
- A PVT Tolerant STM-16 Clock-and-Data Recovery LSI Using an On-Chip Loop-Gain Variation Compensation Architecture in 0.20-μm CMOS-SOI
- Microfabrication Technology for Millimeter-Wave Photonic Systems on Si
- Synthesis and Photochemical Properties of the Orthogonal Porphyrin Triad Composed of Free-Base and Phosphorus(V) Porphyrins
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- OD-04 CHARACTERISTICS AND CONTROL OF MEMS MIRRORS FOR OPTICAL CROSS-CONNECT SWITCH
- Near-Field Mapping System Using Fiber-Based Electro-Optic Probe for Specific Absorption Rate Measurement(Evolution of Microwave and Millimeter-Wave Photonics Technology)
- Monolithic Integration of a Silica-Based Arrayed Waveguide Grating Filter and Silicon Variable Optical Attenuators Based on p--i--n Carrier-Injection Structure
- A Capacitive Sensing Scheme for Control of Movable Element with Complementary Metal–Oxide–Semiconductor Microelectoromechanical-Systems Device
- Conformal Coating of Organic Dielectric Film on Gold Electrodes in Microelectromechanical System Devices by Electrodeposition
- Non-volatile Al_2O_3 memory using an Al-rich structure as a charge storage layer
- Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
- A Sub-0.5V Differential ED-CMOS/SOI Circuit with Over-1-GHz Operation(Digital, Low-Power LSI and Low-Power IP)
- 23 Asymmetric Decomposition of Amino Acids by Circularly Polarized UV Irradiation(General Contributions,The 36^ annual meeting of the SSOEL-JAPAN (Abstracts))
- Electrostatic Energy, Potential Energy and Energy Dissipation for a Width-Variable Capacitor Coupled with Mechatronical Potential Energy during Adiabatic Charging(Advanced Nano Technologies,Microoptomechatronics)