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NTT Microsystem Integration Laboratories | 論文
- Capacitance-Voltage Characteristics of Buried-Channel MOS Capacitors with a Structure of Subquarter-Micron pMOS
- Fabrication of a Microelectromechanical System Mirror Array and Its Drive Electrodes for Low Electrical Interference in Wavelength-Selective Switches
- Synthesis of Mica Thin Film by Pulsed Laser Deposition
- Quantitative Analysis of Amino Acids in Dietary Supplements Using Terahertz Time-domain Spectroscopy
- Birefringence and Optical Waveguiding Losses in Preferentially $c$-Axis Oriented LiNbO3 Thin Films on SiO2 Produced by Electron Cyclotron Resonance Plasma Sputtering
- Ubiquitous User Authentication System with Wireless Battery-Powered Fingerprint Identification Module
- Effect of grain direction on transmittance of 100-GHz millimeter wave for hinoki (Chamaecyparis obtusa)
- Analytical Terahertz Spectroscopy
- 電気化学表面プラズモン共鳴法によるグルコースの触媒酸化反応の解析
- Emergence of Chirality in Thin Solid Film of Phenylalanine with Circularly Polarized Synchrotron Radiation(Chiral Homogeneity and D-Amino Acids, International Symposium on Origins of Life and Astrobiology)
- A 5th-Order SC Complex BPF Using Series Capacitances for Low-IF Narrowband Wireless Receivers
- Tanpopo Cosmic Dust Collector : Silica Aerogel Production and Bacterial DNA Contamination Analysis
- Design and Performance of a Sub-Nano-Ampere Two-Stage Power Management Circuit in 0.35-μm CMOS for Dust-Size Sensor Nodes
- A Capacitive-Sensing Scheme for Control of Adaptive MEMS Device Stacked on CMOS LSI
- Low-loss Silicon Oxynitride Waveguides and Branches for the 850-nm-Wavelength Region
- Advanced Sensing Circuit and Sensor Structure for a High-Sensitive Capacitive Fingerprint Sensor LSI
- A 1-Mbps 1.6-μA Active-RFID CMOS LSI for the 300-MHz Frequency Band with an All-Digital RF Transmitting Scheme
- Compact and Polarization-Independent Variable Optical Attenuator Based on a Silicon Wire Waveguide with a Carrier Injection Structure
- Surface Cleaning of Gold Structure by Annealing during Fabrication of Microelectromechanical System Devices
- Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication