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NTT Basic Research Laboratories | 論文
- In vivo Simultaneous Monitoring by Pt - disk Microelectrodes of Intracerebral Hydrogen Peroxide and Dopamine in Rats
- SUPEROXIDE AUGMENTATION IN A RAT BRAIN UNDER HYPEROXIA AS MONITORED IN VIVO BY A SUPEROXIDE DISMUTASE/CATALASE-MODIFIED MICROELECTRODE
- Possibility of Magnetic Ordered States in Semiconductor Quantum Dot System
- A New Screw-Sense Switchable Polysilylene with Quantized and Superposed Helicities
- Bi2Sr2Ca1Cu2Ox Film on Ar-Ion-Implanted MgO Substrate (第34回真空に関する連合講演会プロシ-ディングス)
- MgO Thin-Film Growth on Si(100)by Excimer Laser Ablation (第33回真空に関する連合講演会プロシ-ディングス)
- Analysis of Donor and Compensation Ratio in I-Doped ZnSe by Far-Infrared Magnetoabsorption
- Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy
- Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
- ^Sn-Mossbauer Spectroscopic Study of High-T_c Superconducting YBa_2(Cu_Sn_)_3O_ and the Gamma-Ray Irradiation Effect
- Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal- Oxide-Semiconductor Field-Effect-Transistor by Separation by lMplanted OXygen (nMOSFET /SIMOX)
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- Diffusion Barrier Mechanism of Extremely Thin Tungsten Silicon Nitride Film Formed by ECR Plasma Nitridation
- A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
- Carrier Concentration Saturation of Double Si Doping Layers in GaAs
- 22pTG-12 Self-cooling of a Micro-mechanical Resonator by Lorentz Force
- Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
- Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots