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NTT Atsugi Electrical Communication Laboratories | 論文
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- 圧電定数を直線的に傾斜させた圧電板の厚み振動の解析と等価回路表示
- Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane
- Magnetic Domain Expansion Phenomena in a Double Mask Type Magnetically Induced Super Resolution Magneto-Optical Disk
- Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs
- Application of Plasma Coupled Device to Solid State Image Sensors : B-4: IMAGING DEVICES
- Selective Deposition of Silicon Oxide and Its Application
- MBE Grown AlGaAs/GaAs HBTs with Direct-Radiation Substrate Heating
- Ta-O (Ta-oxide) and Nb-O (Nb-oxide) Film Deposition Using an Electron Cyclotron Resonance Plasma
- High Devitrification Growth Rate in As-Doped Oxide Film on Silicon-Dioxide Layer
- Electron Trapping Inducedby High-Energy Ionizing Radiation in SiO_2
- Threshold Voltage Behavior for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET
- 3Pa3-10 エネルギー閉じ込め型圧電振動子を用いた液面レベルセンサの等価回路表示について(ポスターセッション)
- Influences of AlGaAs Emitter Band Gaps on Current Gains in AlGaAs/GaAs HBTs