Threshold Voltage Behavior for WSi/Al_xGa_<1-x>As/GaAs MIS-Like Heterostructure FET

スポンサーリンク

概要

• 論文の詳細を見る

• WSi/Al_xGa_<1-x>As/GaAs MIS-like heterostructure FET (MIS-HFET) is compared with HFET fabricated using the same MBE apparatus. Threshold voltage (V_t) variation through a wafer is much less for MIS-HFET (±0.05 V) than for the present HEMT (±0.15 V〜 ±0.4 V). In addition, threshold voltage shift as lowering the temperature from 300 K to 85 K is also much less for MIS-HFET (0.05 V) than for HMET (0.22 V). As it is simpler for MIS-HFET to obtain high V_T uniformity and small V_T dependence on temperature than for HEMT, MIS-HFET is believed to be attractive for LSI application.

• 社団法人応用物理学会の論文
• 1985-08-20

著者

• Arai Kunihiro

  Ntt Atsugi Electrical Communication Laboratories

• Yanagawa Fumihiko

  Ntt Atsugi Electrical Communication Laboratories

• Mizutani Takashi

  NTT Atsugi Electrical Communication Laboratories

関連論文

• Threshold Voltage Behavior for WSi/Al_xGa_As/GaAs MIS-Like Heterostructure FET

スポンサーリンク