Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-11-20

著者

• Imai Yuhki

  Ntt Atsugi Electrical Communication Laboratories

• Ishibashi Tadao

  Ntt Atsugi Electrical Communication Laboratories

• IDDA Masao

  NTT Atsugi Electrical Communication Laboratories

関連論文

• Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
• Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
• Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs
• MBE Grown AlGaAs/GaAs HBTs with Direct-Radiation Substrate Heating
• Influences of AlGaAs Emitter Band Gaps on Current Gains in AlGaAs/GaAs HBTs

スポンサーリンク