Influences of AlGaAs Emitter Band Gaps on Current Gains in AlGaAs/GaAs HBTs

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概要

• 論文の詳細を見る

• The influences of an emitter Al content on current gains in AlGaAs/GaAs heterojunction bipolar transistors are investigated experimentally. In the HBTs examined, a linearly graded band-gap base with heavy doping of 1×10^<19>cm^<-3> is utilized, in which the AlAs mole fraction at the emitter-base interface is 0.1. Current gain increases from 6 to 68 for emitter Al content from 0.1 to 0.3. Experimental results are compared with the calculation, including Fermi-Dirac carrier distribution, band-gap shrinkage, and diffusion and drift transport in the base. The Al content difference between emitter and base junction necessary for obtaining sufficient current gain value is found to be approximately ?x= 0.1.

• 社団法人応用物理学会の論文
• 1985-08-20

著者

• Ishibashi Tadao

  Ntt Atsugi Electrical Communication Laboratories

• ITO Hiroshi

  NTT A tsugi Electrical Communication Laboratories

関連論文

• Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
• Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
• Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs
• MBE Grown AlGaAs/GaAs HBTs with Direct-Radiation Substrate Heating
• Influences of AlGaAs Emitter Band Gaps on Current Gains in AlGaAs/GaAs HBTs

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