MBE Grown AlGaAs/GaAs HBTs with Direct-Radiation Substrate Heating
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-11-20
著者
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Ishibashi Tadao
Ntt Atsugi Electrical Communication Laboratories
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ITO Hiroshi
NTT A tsugi Electrical Communication Laboratories
関連論文
- Suppression of Emitter Size Effecton Current Gainin AlGaAs/GaAs HBTs
- Emitter-Base Junction Size Effect on Current Gain H_ of AlGaAs/GaAs Heterojunction Bipolar Transistors
- Gate Length Dependence of Electron Drift Velocity in the High Field Channel of InP MESFETs
- MBE Grown AlGaAs/GaAs HBTs with Direct-Radiation Substrate Heating
- Influences of AlGaAs Emitter Band Gaps on Current Gains in AlGaAs/GaAs HBTs