High Devitrification Growth Rate in As-Doped Oxide Film on Silicon-Dioxide Layer

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概要

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• Devitrification growth rates in As-doped oxide films on SiO_2 substrates were measured using an optical microscope. Comparisons were then made with growth rates on Si and Si_3N_4 substrates. Subsequent to heat-treatment at 1050℃, 1100℃, and 1150℃, it was found that devitrification rates on SiO_2 substrates were higher than those on Si and Si_3N_4 substrates. From the relation between devitrification growth size and heating time on three kinds of substrates, it has been concluded that the devitrification growth rates in As-doped oxide films depend both on the values of activation energies, and of incubation periods.

• 社団法人応用物理学会の論文
• 1985-12-20

著者

• Tsunoda Yoshihiro

  Ntt Atsugi Electrical Communication Laboratories

関連論文

• High Devitrification Growth Rate in As-Doped Oxide Film on Silicon-Dioxide Layer

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