Electron Trapping Inducedby High-Energy Ionizing Radiation in SiO_2

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概要

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• Electron trapping by positively-charged centers and neutral centers induced in SiO_2 byl MeV electron and gamma-ray (Co^<60>) irradiation was studied by the avalanche injection technique. Two kinds of positively charged trap with cross sections of 2×10^<-13> and 3× 10^<-14> cm^2 were identified. The effective density of these traps increased linearly with the total absorbed dose and with the 0.45 power of the total dose, respectively, suggesting that there is another origin of positively-charged traps besides trapped hole centers. Two neutral traps with cross sections of 6×10^<-16> and 6×10^<-17> cm^2 were also identified, and the effective density of these traps was found to increase linearly with the total dose. Under a positive gate bias, this effective density was about twice that under a negative bias. Neutral trap generation is probably associated with the hole transport process in the oxide.

• 社団法人応用物理学会の論文
• 1985-09-20

著者

• Shiono N

  Ntt Lsi Laboratories Nippon Telegraph And Telephone Corporation

• Shimaya Masakazu

  Ntt Atsugi Electrical Communication Laboratories

• SHIONO Noboru

  NTT Atsugi Electrical Communication Laboratories

関連論文

• Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate Oxides
• Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin(4-6nm)Gate Oxides
• Electron Trapping Inducedby High-Energy Ionizing Radiation in SiO_2

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