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Mitsubishi Electric Corp. Hyogo Jpn | 論文
- Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen
- Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films
- Optimization of Nitridation and Reoxidation Conditions for EEPROM^* Tunneling Dielectric
- A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- Atomic-Layer Epitaxy of Silicon on(100)Surface
- Hetero Atomic-Layer Epitaxy of Ge on Si(100)
- Formation of an Atomically Abrupt Si/Ge Hetero-Interface
- Formation of Atomically Abrupt Si/Ge Hetero-Interface
- Phase Compatibility and Superconductivity of Y-Ba-Cu-O Compounds : Electrical Properties of Condensed Matter
- Superconductivity and Microstructural Observation of Er_Y_Ba_2Cu_3O_ : Electrical Properties of Condensed Matter
- 低化成電圧で作製したAl_3Hf陽極酸化膜キャパシタの熱劣化機構
- Al_3Hf金属間化合物の陽極酸化膜による高耐熱, 高信頼性薄膜キャパシタの検討
- Al_3Hf陽極酸化膜キャパシタの電気的特性と耐熱特性
- AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation