AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)

概要

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785nm (AlGaAs) laser diode (LD) with a window-mirror structure is demonstrated to be a potential candidate as a highly reliable light source of CD-R. The intermixing of a multi-quantum well structure by silicon implantation is used to form the window-mirror structure. Carbon is adopted as an acceptor because of its low thermal diffusion constant in crystals. As a result, the window-mirror-structure 785nm AlGaAs LDs with ordinary far field patterns suitable for the actual CD-R drives have shown stable single lateral mode operation up to 250mW. A mirror degradation level is significantly increased by the window-mirror structure. The pulsed operation current at 160mW, 70℃ of the carbon doped LD is reduced by about 15% from that of zinc doped one. Highly reliable 160mW pulsed operation is also realized at 70℃. This LD believed to be suited for the next generation high-speed (16-24κ) CD-R drives necessitating 160mW class LD.
社団法人電子情報通信学会の論文
2002-01-01