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Microwave Device Development Department Mitsubishi Electric Corporation | 論文
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- A Digital Neural Network Coprocessor with a Dynamically Reconfigurable Pipeline Architecture (Special Issue on New Architecture LSIs)
- Ferroelectric Nonvolatile Memory Technology and Its Applications
- The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
- Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers(Special Issue on Microwave and Millimeter Wave Technology)
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
- An Application of a Flip-Chip-Bonding Technique to GHz-Band SAW Filters for Mobile Communication (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Microwave Characteristics of Alumina-Glass Composite Multi-Layer Substrates with Co-fired Copper Conductors (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Mechanism for AlSiCu Alloy Corrosion
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An 80-MOPS-Peak High-Speed and Low-Power-Consumption 16-b Digital Signal Processor
- A 16-bit Digital Signal Processor with Specially Arranged Multiply-Accumulator for Low Power Consumption
- Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
- Automated Millimeter-Wave On-Wafer Testing System (Special Issue on Microwave and Millimeter Wave Technology)
- Extraction of important sentences for speech summarization based on an F_0 model