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Korea Univ. Chungnam Kor | 論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
- Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
- Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
- Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
- Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis
- Effects of NH_3 Plasma Treatment of the Substrate on Metal Organic Chemical Vapor Deposition of Copper Films
- Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
- Impact of Nitrogen Implantation in Lightly Doped Drain(NIL)on Deep Sub-Micron CMOS Devices
- The Impact of Nitrogen Implantation at LDD(NIL) on Deep Sub-Micron CMOS Devices
- Additional Alkylsilanization of Aminosilane-modified Glass Slide : Effect of Alkylsilane Structure for Enhancing Surface Amine Functionality
- Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Photoluminescence of MgGa_2Se_4 Single Crystals
- Deep Levels in Undoped and ErCl_3-Doped TlGaS_2 single Crystals
- Optical Properties of CuAlSe_2 Single Crystal
- Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization