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Korea Institute for Advanced Study | 論文
- A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor : Threshold Voltage Creep with Gate Voltage
- New Observation of NBTI Degradation and Recovery Effect of Plasma Nitrided Oxide in Nano Scale PMOSFET's
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Decoherence from Internal Dynamics in Macroscopic Matter-Wave Interferometry(Atomic and Molecular Physics)
- Comments on Heterotic Flux Compactifications
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Fourier Phase Analysis of SDSS Galaxies
- Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors
- Mock Theta Functions in Ramanujan's Lost Notebook(Analytic Number Theory)
- ICONE11-36500 SHAPE OPTIMIZATION OF SPACER GRID SPRINGS TO SUPPORT NUCLEAR FUEL RODS
- Peterson-type dimension formulas for graded Lie superalgebras
- 1/8 BPS Objects in N=2 SUSY Gauge Theories(Fundamental Problems and Applications of Quantum Field Theory)
- Discovery of Black Hole Spindown in the BATSE Catalogue of Long GRBs(Astrophysics and Cosmology)
- Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the $Y$-Function Technique
- Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping