スポンサーリンク
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan | 論文
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser
- Epitaxial Growth of Ferromagnetic Iron Silicide Thin Films on Silicon with Yttria-Stabilized Zirconia Buffer Layer
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Photoluminescence Properties from $\beta$-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
- RF Magnetron Sputtering Growth of Epitaxial SrRuO3 Films with High Conductivity
- Epitaxial Growth of (100)-Oriented $\beta$-FeSi2 Thin Films on Insulating Substrates
- Formation of Si
- Formation of Si₂N₂O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon
- Preparation of Diamond-Like Carbon on Ti Film with Tetramethylsilane Buffer Layer
- Property Variation of Ni--W Electroformed Mold for Micro-Press Molding
- Effects of post exposure bake temperature and exposure time on SU-8 nanopattern obtained by electron beam lithography