スポンサーリンク
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan | 論文
- Photoabsorption Properties in InAs Wire Structures Investigated by Dual Light Illumination Method in Scanning Tunneling Microscopy
- Low-Viscosity Measurement by Capillary Electromagnetically Spinning Technique
- End-Group Dependence of Transport Properties for Biphenyl-Based Molecular Junction System
- Micro Roll-to-Roll Patterning Process and Its Application on Flexible Display
- Dual Light Illumination Method in Scanning Tunneling Microscopy for Photoinduced Current Measurements on InAs Wires
- Suppression of Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
- Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy
- Accurate Viscosity Measurement of Ethanol Solution for Determination of Ultrasonic Relaxation Parameters
- Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy
- Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy
- Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal--Oxide--Semiconductor Field Effect Transistors
- Integration of Complementary Metal--Oxide--Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature
- Cross-Sectional Transmission Electron Microscopy Analysis of Nanogap Electrode Fabricated by Atomic Force Microscope Local Oxidation
- Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves
- Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
- Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors
- Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride
- A One-Equation-Type Subgrid-Scale Model Including No Length Scale
- High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding
- Fabrication and Characterization of High-Mobility Graphene p--n--p Junctions Encapsulated by Hexagonal Boron Nitride