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Institute Of Microelectronics | 論文
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Double-Spacer Impact-ionization MOS Transistor : Characterization and Analysis
- Martensitic/Ferritic Super Heat-resistant 650℃ Steels-Design and Testing of Model Alloys
- Renormalization of tensor-network states(New Development of Numerical Simulations in Low-Dimensional Quantum Systems: From Density Matrix Renormalization Group to Tensor Network Formulations)
- Mechanism and Prevention of Spontaneous Tin Whisker Growth
- Modeling and Characterization of the On-chip Interconnects
- Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron Stress
- Label Free Electrical Detection of Single Nucleotide Polymorphisms using Nanowire Biosensors
- シンガポールにおけるBGAパッケージの開発
- 雑種イネの育種-3-雄性不稔葯における花粉退化の細胞組織学的研究〔英文〕
- Current Status of Fast Ignition Related Experiments and the Prospect
- Transmission Electron Microscopy Study of Polycrystalline Si and Si_Ge_ Thin Films : Semiconductors
- C-3-48 消光比10dBを有する10G用MZ型シリコン光変調器(シリコンフォトニクス,C-3.光エレクトロニクス,一般セッション)
- Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon
- Evaluations of Scaling Properties for GOI MOSFETs in Nano-Scale
- Gd doping improved resistive switching characteristics of TiO_2-based resistive memory devices
- A Continuous, Explicit Drain-Current Model for Asymmetric Undoped Double-Gate MOSFETs
- Structure, Thermal Stability and Mechanical Properties of Zr_Al_Ni_Cu_ Glassy Alloy Rod with a Diameter of 16mm Produced by Tilt Casting
- Silicon Nanowire Schottky Barrier NMOS Transistors
- C-3-58 シリコンMZ変調器による20Gbps二値位相変調(C-3.光エレクトロニクス,一般セッション)