A Continuous, Explicit Drain-Current Model for Asymmetric Undoped Double-Gate MOSFETs
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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RUSTAGI S.
Institute of Microelectronics
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Rustagi S.
Institute Of Microelectronic Singapore Science Part Ii
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Chandrasekaran K.
School Of Electrical And Electronic Engineering Nanyang Technological University
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ZHU Z.
School of Electrical and Electronic Engineering, Nanyang Technological University
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ZHOU X.
School of Electrical and Electronic Engineering, Nanyang Technological University
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SEE G.
School of Electrical and Electronic Engineering, Nanyang Technological University
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See G.
School Of Electrical And Electronic Engineering Nanyang Technological University
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