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Institute Of Microelectronics | 論文
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Transport and Back-Gated Field Effect Characteristics of Si Nanowires Formed by Stress-Limited Oxidation
- Growth and Characterization of Germanium on Insulator (GOI) from Sputtered Ge by Novel Single and Dual Necking techniques
- A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers
- Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy
- Band Structure of Surface Terminated Silicon Nanowire
- A Low-Power 12b Analog-to-Digital Converter with On-Chip Precision Trimming (Special Section on the 1992 VLSI Circuits Symposium)
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
- Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag
- Novel Extended-Pi Shaped Silicon-Germanium (eII-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
- Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology
- Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO_2 Stacked Layer
- Theoretical Investigation of Electrical Performance and Band Structure of P-MOSFETs with Si_Ge_x Source/Drain Stressors
- Visible Light Emission from Controlled α-Si/SiN Multi-layer Structures
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Sub-30nm P-channel Schottky Source/Drain FinFETs : Integration of Pt_3Si FUSI Metal Gate and High-κ Dielectric
- Sub-30nm Strained P-Channel FinFETs with Condensed SiGe Source/Drain Stressors
- Effects of Nozzle Configuration on Flow Characteristics inside DC Plasma Torch