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Institute Of Electronics National Chiao Tung University | 論文
- Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
- Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Novel Vacuum Encapsulation Applied for Improving Short-Channel Immunity on Poly-Si Thin Film Transistors
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
- A Multilevel Interconnect Technology with Intrametal Air Gap for High-Performance 0.25-μm-and-Beyond Devices Manufacturing
- Rugged Surface Polycrystalline Silicon Film Formed by Rapid Thermal Chemical Vapor Deposition for Dynamic Random Access Memory Stacked Capacitor Application
- A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
- Charge Loss Due to AC Program Disturbance Stresses in EPROMs
- Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
- The low latitude ionospheric effects of the April 2000 magnetic storm near the longitude 120°E
- Wide-Band Two-Stage Erbium-Doped Fiber Amplifier Module in Parallel Configuration
- A Tunable C-plus-L-Band Fiber Ring Laser Based on Hybrid Amplifier
- A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
- Anisotropic Irreversibility Lines for C-Axis Aligned (Bi, Pb)_2Ca_2Sr_2Cu_3O_ Powders
- Direct Measurement of Electrical Hysteresis of Micron-Sized Pb(Zr, Ti)O_3 Capacitors using the Constant Current Method
- On the Hardening of Friction Stir Processed Mg-AZ31 Based Composites with 5-20% Nano-ZrO_2 and Nano-SiO_2 Particles
- Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors
- The Characteristics and Reliability of Multi-channel Poly-Si TFTs
- NBTI-Stress Induced Grain-Boundary Degradation in Low-Temperature Poly-Si Thin-Film Transistors