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Hynix Semiconductor Inc. Kyoungki‐do Kor | 論文
- Liquid Phase Epitaxy Growth and Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures
- Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
- Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
- Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory
- Optical Property of Pb(Zr, Ti)O_3 Thin Films Deposited on Transparent Substrates by Atmospheric-Pressure Metal-Organic Chemical Vapor Deposition
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Thickness Effects on Physical and Ferroelectric Properties of Bi_La_Ti_3O_ (BLT) Films with c-axis-Preferred and Random Orientations
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Implementation of COMA type ArF Resist for Sub-100nm Patterning
- Leakage Current Characteristics of (Ba,Sr) TiO_3 Thin Films Deposited on Ru Electrodes Prepared by Metal Organic Chemical Vapor Deposition
- Preparation of Silicon-on-Insulator Wafer Using Spin Etching and a Subsequent Selective Etching Process
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor