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Hiroshima-University | 論文
- Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
- A Compact Model of the Pinch-off Region of 100nm MOSFETs Based on the Surface-Potential(Semiconductor Materials and Devices)
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)
- Quantum Effect in Sub-0.1μm MOSFET with Pocket Technologies and Its Relevance for the On-Current Condition
- Circuit Simulation Models for Coming MOSFET Generations(Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
- Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition
- 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis
- A Bulk-Current Model for Advanced MOSFET Technologies Without Binning : Substrate Current and Fowler-Nordheim Current
- A Gate-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2
- A PN Junction-Current Model for Advanced MOSFET Technologies
- Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100nm SOC Circuit Design