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High-Technology Research Center and Faculty of Engineering, Kansai University | 論文
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
- X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
- Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
- A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime
- Proposal of a Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) MOSFET for Deep sub-0.1-μm Channel Regime
- Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime
- Influence of DC Electric Field on Optical Detection by Short-Gap Electrode Glow Discharge in DC Magnetic Field
- Microwave Amplification by Plasma Osaka Tube with Hot Cathode
- Noise of Optical Detection by Glow Discharge in the DC Magnetic Field: Phenomena by the Synchronizing Signals and Outside the Locking Range
- Optical Detection Voltage with Glow Discharge in a DC Magnetic Field
- Glow Discharge in DC Magnetic Field; Effect of the Applied Microwave on the Detection Sensitivity to Optical-Wave Signal
- Injection Locking Effect of Optical Detection by Glow Discharge in DC Magnetic Field
- The Gas Filled Osaka Tube Oscillator
- Analysis of Thin Oxide Growth Mechanisms in Partial-Pressure Rapid-Thermal Oxidation of Silicon
- Lowering of Silicon Surface Cleaning Temperature by Irradiating Low Energy Electron Beams
- Single-Mode Silicon Optical Switch with T-Shaped SiO2 Optical Waveguide as a Control Gate