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Graduate School of Advanced Sciences of Matter Hiroshima University | 論文
- New Performance Indicators of Metal--Oxide--Semiconductor Field-Effect Transistors for High-Frequency Power-Conscious Design
- Bias-Voltage-Dependent Subcircuit Model for Millimeter-Wave CMOS Circuit
- A 120-GHz Transmitter and Receiver Chipset with 9-Gbps Data Rate Using 65-nm CMOS Technology
- Controlled Extraction of Ultracold Ions from a Linear Paul Trap for Nanobeam Production
- Generation of Extremely Weak Sub-Poissonian Light Using High-Efficiency Light-Emitting Diodes
- Thickness Dependences of Nucleation and Annihilation Fields of Magnetic Vortices in Submicron Supermalloy Dots
- Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100 nm Cu Interconnections
- Climbing Rates of Microtubules Propelled by Dynein after Collision with Microfabricated Walls
- Performance Improvement of HfAlOxN n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms
- Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics
- A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
- Analysis of Transmission Characteristics of Gaussian Monocycle Pulses for Silicon Integrated Antennas
- Principal Component Analysis-Based Object Detection/Recognition Chip for Wireless Interconnected Three-Dimensional Integration
- Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu
- Stochastic Computing Chip for Measurement of Manhattan Distance
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
- Contact Resistance Reduction Using Vacuum Loadlock System and Plasma Dry Cleaning
- Efficiency Enhancement of Indirect Transverse Laser Cooling with Synchro-Betatron Resonant Coupling by Suppression of Beam Intensity
- Simulation Study of Emittance Growth from Coulomb Collisions in Low-Temperature Ion Beams
- Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling