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Graduate School of Advanced Sciences of Matter Hiroshima University | 論文
- Indirect Transverse Laser Cooling of Ions in a Linear Paul Trap
- Electrostatic Oscillations Observed in Non-Neutral Electron Plasmas Confined in a Magnetic Field Gradient
- Discharge Characteristics of Plasma Display Panels with SrCaO Protective Layer Manufactured Using "All-in-Vacuum" Process
- Molecular Approaches to the Treatment, Prophylaxis, and Diagnosis of Alzheimer's Disease : Novel PET/SPECT Imaging Probes for Diagnosis of Alzheimer's Disease
- Stress from Discontinuous SiN Liner for Fully Silicided Gate Process
- Efficient Crystalline Si/Poly(ethylene dioxythiophene) : Poly(styrene sulfonate) : Graphene Oxide Composite Heterojunction Solar Cells
- Analysis of De-Embedding Error Cancellation in Cascade Circuit Design
- Effect of Static Electric Field on the Beat Structures in Four-Wave Mixing Signals from Semiconductor Microcavities
- A Fully-Implantable Wireless System for Human Brain-Machine Interfaces Using Brain Surface Electrodes : W-HERBS
- Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance
- Panel Processing Effects on Discharge Characteristics of Plasma Display Panels
- Microwave-Assisted Synthesis of Organometallic Complexes of 99mTc(CO)3 and Re(CO)3: Its Application to Radiopharmaceuticals
- Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14 Multi-Hollow Discharge Plasma Chemical Vapor Deposition
- Effect of Nitridation of Si Nanoparticles on the Performance of Quantum-Dot Sensitized Solar Cells
- AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method
- Effects of Hydrogen Dilution on ZnO Thin Films Fabricated via Nitrogen-Mediated Crystallization
- Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition
- Improvement of Si Adhesion and Reduction of Electron Recombination for Si Quantum Dot-Sensitized Solar Cells
- High Amount Cluster Incorporation in Initial Si Film Deposition by SiH4 Plasma Chemical Vapor Deposition
- Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering