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Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan | 論文
- Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
- Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems(Heterostructure Microelectronics with TWHM2003)
- Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication
- Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology (Special Issue : Microprocesses and Nanotechnology)
- An 85 GHz Distributed Amplifier with 15.5 dBm Output Saturated Power Using 0.1 μm InP-based High Electron Mobility Transistors
- Built-In Microplanar Lens for Light Coupling to Two-Dimensional Photonic Crystal Waveguide
- Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
- Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator
- Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
- Mn2O3 Slurry Reuse by Circulation Achieving High Constant Removal Rate
- Effect of Oxygen Annealing on Ferroelectricity of BiFeO3 Thin Films Formed by Pulsed Laser Deposition
- Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
- Synthesis of PbTiO3 Nanotubes by Metalorganic Chemical Vapor Deposition
- Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity
- 93--133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology
- Impact of Thermomechanical Stresses on Bumpless Chip in Stacked Wafer Structure
- New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor