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Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan | 論文
- Ultra-High Extinction Ratio and Low Cross Talk Characteristics of 4-Array Integrated SOA Module with Novel Wavelength-Insensitive Parallel Optical Coupling Scheme
- 93-133GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology (Special Issue : Solid State Devices and Materials)
- Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors