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Faculty of Science and Technology,Hirosaki University | 論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
- Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
- KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
- GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
- UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
- Epitaxial Growth Mechanism of the (100) As Surface of GaAs : The Effect of Positive Holes : Condensed Matter
- On the Reaction Mechanism of the Pyrolyses of TMG and TEG in MOCVD Growth Reactors
- Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
- Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
- Ab Initio Molecular Orbital Study on the Reaction of Trimethylaluminum with an H Radical
- Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine