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Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University | 論文
- Atomic Sites of S on (NH_4)_2S_x-Treated GaAs(100) Surface
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
- Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
- Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
- New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
- Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
- Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere