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Faculty Of Technology Tokyo University Of Agricuture And Technology | 論文
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- Modification Effect of a-Si_ N_x:H Surface by Hydrogen Radicals
- Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
- Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
- Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
- Photo-Process of Tantalum Oxide Films and Their Characteristics : Surfaces, Interfaces and Films
- Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators
- 励起水素原子の発生とその電子材料薄膜作製への応用〔英文〕 (電子材料技術の新展開)
- Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System
- Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques
- Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method
- Characterization of Pb(Zr,Ti)O_3 Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices
- Fabrication of c-Axis Oriented Pb(Zr, Ti)O_3 Thin Films on Si(100) Substrates Using MgO Intermediate Layer
- Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor