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Electronics Research Laboratory, Matsushita Electronics Corporation | 論文
- A Small-Sized 10 W Module for 1.5GHz Portable DMCA Radios Using New Power Divider/Combiner (Special Issue on Microwave and Millimeterwave High-power Devices)
- Substrate Potential Effects on Low-Temperature Preparation of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Time-Dependent Leakage Current Behavior of Integrated Ba_Sr_TiO_3 Thin Film Capacitors during Stressing
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_Sr_TiO_3 Capacitors Integrated in a Silicon Device
- Si LSI Process Technology for Integrating Ferroelectric Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Application of Ferroelectric Thin Films to Si Devices (Special Issue on Quarter Micron Si Device and Process Technologies)
- A Digital Neural Network Coprocessor with a Dynamically Reconfigurable Pipeline Architecture (Special Issue on New Architecture LSIs)
- Thermal Aging Effect in Poled Ferroelectric SrBi_2(Ta,Nb)_2O_9 Capacitors
- Voltage Shift Effect on Retention Failure in Ferroelectric Memories
- Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Retention Characteristics of a Ferroelectric Memory Based on SrBi_2(Ta, Nb)_2O_9
- Ferroelectric Nonvolatile Memory Technology and Its Applications
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- A GaAs Single Voltage Controlled RF Switch IC
- A BiCMOS Analog Neural Network with Dynamically Updated Weights
- Investigation of Discharge Phenomena in a Cell of Color Plasma Display Panel I. : One-Dimensional Model and Numerical Method
- Diffusion and Quenching of Metastable Xe Atoms in Mixtures of Xe and Rare Gases
- Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes
- 120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure