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Electron Devices Division Electrotechnical Laboratory | 論文
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
- High-Temperature Operation of Silicon Carbide MOSFET
- Annealing Effects on Al and AN-Si Contacts with 3C-SiC
- 22aZH-2 PARASOLコードによるトカマクのスク***・オフ層の熱伝導解析(22aZH 核融合プラズマ(乱流・輸送・閉じ込め理論),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
- Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
- Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
- Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process