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Electron Devices Division Electrotechnical Laboratory | 論文
- High-Density Recording Mechanism of Magnetooptieal Disks
- 5.1 核融合プラズマにおけるマルチスケールシミュレーション(5.マルチスケールシミュレーション,マルチスケールでのプラズマ・壁相互作用の理解の現状)
- 27pRB-1 異方性弾性体中の転位ループおよびその相互作用エネルギー(27pRB 格子欠陥・ナノ構造(転位・表面・界面),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
- Optical and Electrical Properties of β-FeSi_2/Si, β-FeSi_2/InP Heterojunction Prepared by RF-Sputtering Deposition
- Simple Analytical Methods for Determining Optical Constants of Thin Films : Their Application to Amorphous Silicon
- 24aQF-4 スク***・オフ層におけるプラズマ・ブロッブの非線形シミュレーション研究(核融合プラズマ(輸送・閉じ込め理論),領域2,プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理)
- C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
- Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
- Molecular Orientation Changes in Thin Solid Films of Long-Chain Compounds Induced by Thermal Treatment
- Morphological Change in Deposited Films of Calcium Stearate by Thermal Treatment
- A Novel Al/TiN/CVD-W Structure to Eliminate Resistance Anomaly in Deep Submicron Al/CVD-W Interconnects
- 24aYF-1 非等方性弾性体中の転位に対応する応力関数の研究(格子欠陥・ナノ構造(力学物性・転位),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- Compositional Effects on In Situ YBaCuO Films Grown at Low Oxygen Pressures
- Contact Hole Etch Scaling toward 0.1 μm
- Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
- Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
- Radical Behavior in Inductively Coupled Fluorocarbon Plasma for SiO2 Etching
- RIE-Lag Reduction by NH_3 Addition in Aluminum Alloy Etching under BCl_3/Cl_2 Chemistry
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