スポンサーリンク
Electron Devices Division Electrotechnical Laboratory | 論文
- 22aZH-9 ドリフトテアリングモードに対する揺動ブートストラップ電流効果(22aZH 核融合プラズマ(MHD理論),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- 26pYK-6 異方性弾性論にもとずく転位ループの研究(シミュレーション,転位,点欠陥・照射損傷),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 22aZH-1 スク***・オフ層におけるプラズマ・ブロップと対流輸送に関する非線形シミュレーション研究(22aZH 核融合プラズマ(乱流・輸送・閉じ込め理論),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- 23pQF-9 帯状流による輸送のシーソー機構(核融合プラズマ(帯状流・GAM),領域2,プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理)
- In Situ Hydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane
- Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination Studied by a Constant Photocurrent Method
- Constant-Photocurrent-Method (CPM) Studies on Light-Induced Changes in Hydrogenated Amorphous Silicon
- Origin of the Reduction of Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination
- Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH_4
- Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon
- Minority Carrier Lifetime in Laser Recrystallized Polysilicon
- Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions
- Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
- Relationship between Carrier Diffusion Length and Light-Induced Defects in Hydrogenated Amorphous Silicon
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
スポンサーリンク