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Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea | 論文
- Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)_2] and Dicobalt Octacarbonyl [Co_2(CO)_8]
- ZrO_2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
- TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallizaiton
- Surface Characteristics of Indium-Tin Oxide Cleaned by Remote Plasma
- Removal of the Polymer Formed at Via Hole with Via Etching Stopped on an Al layer Structure
- Low-Temperature Growth of Carbon Nanotube by Plasma-Enhanced Chemical Vapor Deposition using Nickel Catalyst
- Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
- A Comparison of Al2O3/HfO2 and Al2O3/ZrO2 Bilayers Deposited by the Atomic Layer Deposition Method for Potential Gate Dielectric Applications
- Optical Properties of Self-Assembled ZnO Nanocrystals Embedded in a $ p$-Phenylene Biphenyltetracarboximide Polyimide Layer
- Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device
- Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
- Fabrication and Characterization of Direct-Patternable ZnO Films Containing Pt Nanoparticles
- Characteristics of Cobalt Films Deposited by Metal Organic Chemical Vapor Deposition Method Using Dicobalt Hexacarbonyl tert-Butylacetylene
- Characteristics of Polymer Residues Formed at the Via Hole and Photoresist Ashing Properties of Remote Oxygen/Nitrogen Plasma
- Preparation of Nanostructured TiO2 Powders with Additions of Various Metal–Chlorides for Efficient Photocatalyst
- Moisture Barrier Properties of Al₂O₃ Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures