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Division Of Materials Science And Engineering Hanyang University | 論文
- Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
- Effects of NH_3 Plasma Treatment on Methyl Silsequioxane for Copper Multi-Level Interconnect(Semiconductors)
- Magnetic Properties of Nonequilibrium Fe-Pd Alloys Produced by DC Triode Sputtering
- Preparation of Layered Li[Ni_Mn_]O_2 by Ultrasonic Spray Pyrolysis Method
- Electroless Copper Deposition on H_2 Plasma-Treated TaN_x (x = 0-1) Diffusion Barriers
- Microstructure Evolution of the TaN_x (x = 0-1) Diffusion Barriers by NH_3 Plasma Treatment for the Electroless Copper Deposition
- 中間層にAIを用いた二重トンネル接合の磁気抵抗効果
- 中間層にAlを用いた二重トンネル接合の磁気抵抗効果
- Surface Modification of Low Dielectric Fluorinated Amorphous Carbon Films by Nitrogen Plasma Treatment : Electrical Properties of Condensed Matter
- Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
- Influence of the Performance of Organic Light Emitting Devices by Chemical Reaction at the Interface between Electron Transport Material and Ba Cathode
- Prediction Model for the Austenite Grain Size in the Coarse Grained Heat Affected Zone of Fe-C-Mn Steels : Considering the Effect of Initial Grain Size on Isothermal Growth Behavior
- RH-TOBプロセスにおけるダイレクトボンドマグクロれんがの損傷機構
- Effect of Post-Plasma Treatment Time on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films
- Dielectric Constant Stability and Thermal Stability of Cu/Ta/SiOF/Si Multilayer Films
- Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
- Chemical Reaction During Pt Etching with SF6/Ar and Cl2/Ar Plasma Chemistries
- Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal--Oxide--Semiconductor Capacitors
- Fabrication of Polycrystalline Silicon Thin Film Transistors in Array Patterns by Field-Aided Lateral Crystallization Technique
- Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device