Fabrication of Polycrystalline Silicon Thin Film Transistors in Array Patterns by Field-Aided Lateral Crystallization Technique

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概要

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• As a crystallization process, the field-aided lateral crystallization (FALC) technique has some outstanding advantages, such as high crystallization rate and low process temperature. In this study, an array of polycrystalline silicon thin film transistors (TFTs) was fabricated on a corning 1737 glass substrate using Ni catalyst. The electric field applied through common electrodes connected to the source and drain led to directional crystallization from the negative-electrode side to the positive-electrode side at 550 °C. The applied electric field induced elongated grains with an accelerated crystal growth rate. As a result, each TFT channel showed not only a uniform crystallization rate but also homogeneous grain morphology. All of these crystallization behaviors are attributed to the electrical properties of the TFT array such as field effect mobility, threshold voltage, and on/off current ratio.

• 2007-03-30

著者

• Choi Duck-kyun

  Division Of Materials Science And Engineering Hanyang University

• Kim Young-bae

  Department Of Ceramic Engineering Hanyang University

• Kim Hyun-chul

  Division Of Materials Science And Engineering Hanyang University

• NOGUCHI Takashi

  Department of Electrical and Electronics Engineering, University of the Ryukyus

• Han Tae-seok

  Division Of Materials Science And Engineering Hanyang University

• Park Chan-jun

  Division Of Materials Science And Engineering Hanyang University

• Jeon Hyeon-pyo

  Division Of Materials Science And Engineering Hanyang University

• Han Tae-Seok

  Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea

• Park Chan-Jun

  Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea

• Kim Hyun-Chul

  Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea

• Kim Young-Bae

  Department of Physics, North Carolina State University, 2700 Stinson Drive, Box 8202, Raleigh, NC 27695, U.S.A.

• Jeon Hyeon-Pyo

  Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea

• Choi Duck-Kyun

  Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea

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