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Dept. of Electronic Engineering, Feng Chia University | 論文

• A New Combination of RSD and Inside Spacer Thin Film Transistor
• A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
• A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
• InGaP/InGaAs DCFETs with Drain and Source Recess Process
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
• A Novel Power MOSFET Structure with Split P-well and Split Poly Design
• A Novel Power MOSFET Structure with Split P-well and Split Poly Design
• Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
• The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
• A New Combination of RSD and Inside Spacer Thin Film Transistor
• A New Bottom-Gated Polysiliccon Thin Film Transistors with Polysilicon spacer
• A New Bottom-Gated Polysiliccon Thin Film Transistors with Polysilicon spacer

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