A New Combination of RSD and Inside Spacer Thin Film Transistor
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we proposed a combination structure polycrystalline silicon (poly-Si) thin film transistor of raised source/drain (RSD) and inside spacer (IS). From the experiment and simulation of electric field, it shows the lower electric field strength than the conventional one. Therefore it can decrease the kink current and lower leakage current can be achieved. Moreover our proposed structure had almost the same on/off current ratio compared with conventional.
- 2009-06-17
著者
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Chang M.
Dept. of Electronic Engineering, Feng Chia University
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Li T.
Dept. of Electronic Engineering, Feng Chia University
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Chien F.
Dept. of Electronic Engineering, Feng Chia University
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Liao C.
Dept. of Electrical Engineering, National Central University
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Tsai Y.
Dept. of Electrical Engineering, National Central University
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Liao C.
Dept. Of Electrical Engineering National Central University
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Tsai Y.
Dept. Of Electrical Engineering National Central University
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Chien F.
Dept. Of Electronic Engineering Feng Chia University
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Chang M.
Dept. Of Electronic Engineering Feng Chia University
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Li T.
Dept. Of Electronic Engineering Feng Chia University
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