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Dept. Of Electrical Engineering National Central University | 論文
- High Power In_0.49Ga_0.51P/In_0.15Ga_0.85As Heterostructure Doped-Channel FETs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model(Semiconductor Materials and Devices)
- Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
- High ruggedness power MOSFET design by a source RTA process (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High ruggedness power MOSFET design by a source RTA process (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A New Combination of RSD and Inside Spacer Thin Film Transistor
- A New Bottom-Gated Polysiliccon Thin Film Transistors with Polysilicon spacer
- A New Bottom-Gated Polysiliccon Thin Film Transistors with Polysilicon spacer
- Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth(Lasers, Quantum Electronics)